advanced power n-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss 100v lower on-resistance r ds(on) 15m fast switching characteristic i d 65a rohs compliant description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w w/ t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 0.9 /w rthj-a maximum thermal resistance, junction-ambient 62 /w data and specifications subject to change without notice a p75t10gp-hf halogen-free product parameter rating drain-source voltage 100 gate-source voltage + 20 continuous drain current, v gs @ 10v 65 linear derating factor 1.11 storage temperature range continuous drain current, v gs @ 10v 41 pulsed drain current 1 260 total power dissipation 138 -55 to 150 200807113 thermal data parameter 1 operating junction temperature range -55 to 150 g d s a dvanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the to-220 package is widely preferred for commercial-industrial power applications and suited for low voltage applications such as dc/dc converters g d s to-220(p)
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =1ma 100 - - v ?? v dss / ? t j breakdown voltage temperature coefficient reference to 25 : , i d =1ma - 0.09 - v/ : r ds(on) static drain-source on-resistance 2 v gs =10v, i d =30a - - 15 m ? ? ?
a p75t10gp-h f fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 50 100 150 200 250 02468 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 6.0 v 5.0v 4.5v v g =3.0v 0 20 40 60 80 100 120 0123456789 v ds , drain-to-source voltage (v) i d , drain current (a) 10v 6.0v 5.0v 4.5v v g =3.0v t c = 150 o c 11 12 13 14 15 16 17 246810 v gs gate-to-source voltage (v) r ds(on) (m ) i d =16a t c =25 o c 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =30a v g =10v 0 15 30 45 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0 0.5 1 1.5 2 -50 0 50 100 150 t j ,junction temperature ( o c) normalized v gs(th) (v)
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 AP75T10GP-HF 0 2 4 6 8 10 12 0 20 40 60 80 100 120 140 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds =50v v ds =64v v ds =80v i d =30a t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 4.5v q gs q gd q g charge 100 1000 10000 1 5 9 1317212529 v ds ,drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 1 10 100 1000 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a) t c =25 o c s ingle pulse 100us 1ms 10ms 100ms dc
package outline : to-220 millimeters min nom max a 4.25 4.48 4.70 b 0.65 0.80 0.90 b1 1.15 1.38 1.60 c 0.40 0.50 0.60 c1 1.00 1.20 1.40 e 9.70 10.00 10.40 e1 --- --- 11.50 e ---- 2.54 ---- l 12.70 13.60 14.50 l1 2.60 2.80 3.00 l2 1.00 1.40 1.80 l3 2.60 3.10 3.60 l4 14.70 15.50 16.00 l5 6.30 6.50 6.70 3.50 3.70 3.90 d 8.40 8.90 9.40 1.all dimensions are in millimeters. 2.dimension does not include mold protrusions. part marking information & packing : to-220 symbols advanced power electronics corp. e b b1 e d l3 l4 l1 l2 a c1 c l package code part number date code (ywwsss) y last digit of the year ww week sss sequence if last "s" is numerical letter : rohs product if last "s" is english letter : hf & rohs product 75t10gp ywwsss logo l5 meet rohs requirement for low voltage mosfet only e1 5
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